npn silicon planar epitaxial transistors 2N2369 2N2369a to-18 applications 2N2369/a are npn silicon high speed saturated switching, transistors with low power & high speed switching applications. absolute maximum ratings description symbol value unit collector -emitter voltage vceo 15 v collector -emitter voltage vces 40 v collector -base voltage vcbo 40 v emitter -base voltage vebo 4.5 v collector current continuous ic 200 ma collector current peak(10us pulse) ic(peak) 500 ma power dissipation@ ta=25 degc pd 360 mw derate above 25 deg c 2.06 mw/de g c @tc=25 deg c pd 1.2 w @tc=100 deg c pd 0.68 w derate above100 deg c 6.85 mw/de g c operating and storage junction tj, tstg -65 to +200 deg c temperature range electrical characteristics (ta=25 deg c unless otherwise specified) description symbol test condition 2n 2369 2N2369a unit collector -emitter voltage vceo*(sus ) ic=10ma, ib=0 >15 >15 v collector -emitter voltage vces ic=10ua, vbe=0 >40 >40 v collector -base voltage vcbo ic=10ua, ie=0 >40 >40 v emitter -base voltage vebo ie=10ua, ic=0 >4.5 >4.5 v collector-cut off current icbo vcb=20v, ie=0 <400 - na vcb=20v, ie=0, ta=150 deg c <30 - ua ices vce=20v, vbe=0 - <400 na base current ib vce=20v, vbe=0 - <400 na collector emitter saturation voltage vce(sat)* ic=10ma,ib=1ma <0.25 <0.20 v ic=30ma,ib=3ma - <0.25 v ic=100ma,ib=10ma - <0.50 v ic=10ma,ib=1ma,ta= +125 deg c - <0.30 v base emitter saturation voltage vbe(sat) * ic=10ma,ib=1ma 0.7-0.85 0.7-0.85 v ic=30ma,ib=3ma - <1.15 v ic=100ma,ib=10ma - <1.60 v ic=10ma,ib=1ma,ta= +125 deg c - >0.59 v ic=10ma,ib=1ma, ta= -55 deg c - <1.02 v dc current hfe* ic=10ma, vce=1v 40-120 40-120 ic=10ma,vce=1v, ta= -55 deg c >20 - ic=10ma,vce=0.35v, ta= -55 de g c - >20 continental device india limited data sheet page 1 of 3 continental device india limited an iso/ts 16949, iso 9001 and iso 14001 certified company
electrical characteristics (ta=25 deg c unless otherwise specified) 2N2369/2369a description symbol test condition 2n 2369 2N2369a unit dc current hfe* ic=10ma,vce=0.35v - 40-120 ic=30ma,vce=0.4v - >30 ic=100ma,vce=1v - >20 ic=100ma,vce=2v >20 - small signal characteristics transition frequency ft vce=10v,ic=10ma, f=100mhz >500 >500 mhz output capacitance cobo vcb=5v, ie=0, f=140khz <4.0 <4.0 pf turn on time ton ic=10ma, ib1=3ma, <12 <12 ns ib= -1.5ma, vcc=3v turn off time toff ic=10ma, ib1=3ma, - <15 ns ib2= -1.5ma, vcc=3v storage time ts ic=100ma, ib1=ib=10ma, vcc=10 v <13 <13 ns *pulse test : pulse width =300us, duty cycle=2% to-18 metal can package to-18 1k/polybag 350 gm/1k pcs 3" x 7.5" x 7.5" 5.0k 17" x 15" x 13.5" 80.0k 34 kgs package net weight/qty details standard pack inner carton box qty outer carton box qty gr wt size size packing detail g 1 2 3 h j l f a d b e c k dim min max all diminsions in mm. a 5.24 5.84 b 4.52 4.97 c 4.31 5.33 d 0.40 0.53 e?0.76 f?1.27 g?2.97 h 0.91 1.17 j 0.71 1.21 k12.70 ? l45 deg pin configuration 1. emitter 2. base 3. collector 1 2 3 continental device india limited data sheet page 2 of 3
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